Sven Öberg
Sven Öberg

Sven Öberg

Luleå University of Technology
Applied Physics
Material Science
Department of Engineering Sciences and Mathematics
+46 (0)920 491066
E192 Luleå


My main research is in the area of applied mathematics and computational physics/chemistry.

A major part this work involves developing efficient methods and computer software for first-principles calculations on large atomic systems (1000 atoms or more), based on Density-Functional Theory (DFT), with applications mostly on defects in semiconductors, but also on nanostructures and biochemical molecules.



I teach engineering students in mathematics, numerical analysis and parallel computing. Also give a number of PhD courses on modelling in materials science.


Part time, I am also advanced consultant in scientific computing and project leader at the High Performance Computing Centre North at Umeå University.



Article in journal

A first-principles model of copper-boron interactions in Si (2017)

Wright. E, Coutinho. J, Öberg. S, Torres. V
Journal of Physics, ISSN: 0953-8984, Vol. 29, nr. 6
Article in journal

Adsorption and migration of single metal atoms on the calcite (10.4) surface (2017)

Pinto. H, Haapasilta. V, Lokhandwala. M, Öberg. S, Foster. A
Journal of Physics, ISSN: 0953-8984, Vol. 29, nr. 13
Article in journal

Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n-type Czochralski-grown silicon (2017)

Vaqueiro-Contreras. M, Markevich. V, Halsall. M, Peaker. A, Santos. P, Coutinho. J, et al.
Physica Status Solidi. Rapid Research Letters, ISSN: 1862-6254, Vol. 11, nr. 8
Article in journal

Some hydrated molecular complexes of 4-cyanophenylboronic acid (2017)

Talwelkarshimpi. M, Öberg. S, Giri. L, Pedireddi. V
Crystal Growth & Design, ISSN: 1528-7483
Article in journal

Theory of a carbon-oxygen-hydrogen recombination center in n-type Si (2017)

Santos. P, Coutinho. J, Öberg. S, Vaqueiro-Contreras. M, Markevich. V, Halsall. M, et al.
Physica status solidi. A, Applied research, ISSN: 0031-8965, Vol. 214, nr. 7